2SC3869 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion type

Power Transistors
60
50
40
(1)
30
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P_C=2.0W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_CE
6
T_C=25˚C
I_B=700mA
5
600mA
500mA
400mA
4
300mA
200mA
3
150mA
100mA
2
50mA
1
20mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC3869
I_C — V_CE(sat)
8
I_C/I_B=5
7
T_C=25˚C
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
Collector to emitter saturation voltage V_CE(sat) (V)
I_C — V_CE(sat)
8
I_C/I_B=5
7
T_C=25˚C
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
Collector to emitter saturation voltage V_CE(sat) (V)
1000
300
100
h_FE — I_C
V_CE=5V
T_C=25˚C
30
T_C=–25˚C
10
25˚C
3
125˚C
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
C_ob — V_CB
V_CE=10V
T_C=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=150V
T_C=25˚C
3
t_stg
1
0.3
t_on
0.1
t_f
0.03
0.01
0
1
2
3
4
Collector current I_C (A)
Area of safe operation (ASO)
100
Non repetitive pulse
T_C=25˚C
30
10
3
10ms
DC
1
t=1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2