2SC3829 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
P_C — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
Ta=75˚C
25˚C
–25˚C
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
2.4
I_E=0
f=1MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to base voltage V_CB (V)
I_C — V_CE
24
Ta=25˚C
20
I_B=200µA
180µA
160µA
16
140µA
120µA
12
100µA
8
80µA
60µA
4
40µA
20µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
h_FE — I_C
600
V_CE=8V
500
400
Ta=75˚C
300
25˚C
200
–25˚C
100
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
GUM — I_C
24
V_CE=8V
f=800MHz
Ta=25˚C
20
16
12
8
4
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
2SC3829
I_C — V_BE
120
V_CE=8V
100
25˚C
Ta=75˚C –25˚C
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_C
12
V_CE=8V
f=800MHz
Ta=25˚C
10
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
NF — I_C
12
V_CE=8V
(R_g=50Ω)
10
f=800MHz
Ta=25˚C
8
6
4
2
0
0.1 0.3 10 3 100 300 1000
Collector current I_C (mA)
2