2SA886 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

2SA0886
P_C  T_a
1.6
1.2
0.8
0.4
0
0
40
80
120
160
Ambient temperature T_a (°C)
I_C  V_CE
–4.0
TC=25˚C
–3.5
IB=–40mA
–35mA
–3.0
–30mA
–25mA
–2.5
–20mA
–2.0
–15mA
–1.5
–10mA
–1.0
–5mA
–0.5
0
0
–2 –4 –6 –8 –10
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
IC/IB=10
–10
–1
TC=100˚C
–0.1
25˚C
–25˚C
–0.01
–0.01
–0.1
–1
Collector current I_C (A)
V_BE(sat)  I_C
IC/IB=10
–10
1000
–1
TC=–25˚C
100
100˚C
25˚C
–0.1
10
h_FE  I_C
VCE=–5V
TC=100˚C
25˚C
–25˚C
–0.01
–0.01
–0.1
–1
Collector current I_C (A)
1
–0.01
–0.1
–1
Collector current I_C (A)
f_T  I_E
240
VCB=–5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
0.01
0.1
1
10
Emitter current I_E (A)
C_ob  V_CB
140
IE=0
f=1MHz
TC=25˚C
120
100
80
60
40
20
0
–1
–10
–100
Collector-base voltage V_CB (V)
V_CER  R_BE
–60
TC=25˚C
–50
–40
–30
–20
–10
0
0.001 0.01
0.1
1
10
Base-emitter resistance R_BE (kΩ)
I_CEO  T_a
1000
VCE=–12V
100
10
1
0 20 40 60 80 100 120
Ambient temperature T_a (°C)
2
SJD00003BED