2SA1254 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
P_C — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–120
–100
–80
–60
h_FE — I_C
V_CE=–10V
Ta=75˚C
25˚C
–25˚C
–40
–20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
f_T — I_E
600
V_CB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current I_E (mA)
I_C — V_CE
–30
Ta=25˚C
–25
–20
I_B=–250µA
–200µA
–15
–150µA
–10
–100µA
–5
–50µA
0
0
–2 –4 –6 –8 –10
Collector to emitter voltage V_CE (V)
2SA1254
–100
–30
–10
V_CE(sat) — I_C
I_C/I_B=10
–3
–1
– 0.3
Ta=75˚C
25˚C
– 0.1
– 0.03
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
C_ob — V_CB
6
f=1MHz
I_E=0
Ta=25˚C
5
4
3
2
1
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage V_CB (V)
P_G — I_C
24
V_CE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current I_C (mA)
C_re — V_CE
5
I_C=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to emitter voltage V_CE (V)
NF — I_E
5
V_CB=–10V
f=100MHz
Ta=25˚C
4
3
2
1
0
0.1
0.3
1
3
10
Emitter current I_E (mA)
2