ERZ-VA7D471 Datasheet, PDF (14/20 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers

“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV10D820 to ERZV10D511
2000
.BY
-FBLBHF
$VSSFOU
1000
471
900
800
431
391
361
700
600
500
400
511
300
.BY
$MBNQJOH
7PMUBHF
511
471
431
391
361
331
271
241
221
201
151
121
101
820
200
271
241
201
151
100
90
121
80
101
70
60
820
50
40
331
221
30
10^-6
10^-5
10^-4 10^-3 10^-2 10^-1
10⁰
Current (A)
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
10¹
10²
10³
10⁴
10⁵
ERZV10D561 to ERZV10D182CS
5000
4000
.BY
-FBLBHF
$VSSFOU
.BY
$MBNQJOH
7PMUBHF
182CS
ERZV10D820 to ERZV10D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
100
11100100₄₃¹_5TT^{20TiTimmiTimmieemeessesss}
10
10 _{6 Times}
1
20
100
1000
10000
Impulse Width (µs)
ERZV10D561 to ERZV10D112
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
100 ^1111000034T₅^{1TTimiim20meTeessTsimimeess}
10
10 _{6 Times}
3000
102
911
112
821
102
911
821
2000
751
681
182CS
621
561
1000
900
800
112
700
600
500
400
561
300
751
681
Test Current Waveform
621
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 µs
200
10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰
10¹
10² 10³
10⁴
10⁵
Current (A)
1
20
100
1000
10000
Impulse Width (µs)
ERZV10D182CS
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10⁶ times :10 sec. interval
1000
2 _Times
100 ₁₀ ¹_4T0im³_{eTsim10e5s1T0im}2^{1eTs0imTiemses}
10
10 _{6 Times}
1
20
100
1000
10000
Impulse Width (µs)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Aug. 2012
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