UNR1211 Datasheet, PDF (11/14 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

C_ob  V_CB
6
f = 1MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1
1
10
100
Collector-base voltage V_CB (V)
UNR121x Series
I_O  V_IN
10⁴
V_O = 5 V
T_a = 25°C
10³
V_IN  I_O
100
VO = 0.2 V
Ta = 25°C
10
10²
1
10
0.1
1
1.5 2.0 2.5 3.0 3.5 4.0
Input voltage V_IN (V)
0.01
0.1
1
10
100
Output current I_O (mA)
Characteristics charts of UNR121F
I_C  V_CE
240
Ta = 25°C
V_CE(sat)  I_C
100
IC / IB = 10
200
0.9 mA
0.8 mA
160
0.7 mA
0.6 mA
120 _{IB = 1.0 mA}
80
0.5 mA
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
0.1
1
10
100
Collector current I_C (mA)
C_ob  V_CB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1
1
10
100
Collector-base voltage V_CB (V)
I_O  V_IN
10⁴
V_O = 5 V
T_a = 25°C
10³
10²
10
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage V_IN (V)
h_FE  I_C
160
VCE = 10 V
120
Ta = 75°C
80
25°C
−25°C
40
0
1
10
100
1 000
Collector current I_C (mA)
V_IN  I_O
100
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.01
0.1
1
10
100
Output current I_O (mA)
SJH00003BED
11