XP6534 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP6534
Silicon NPN epitaxial planer transistor
For high-frequency amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
1
6
2
5
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SC2404 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
30
V
Rating _{Collector to emitter voltage}
of
V_CEO
20
V
element ^{Emitter to base voltage}
V_EBO
3
V
Collector current
I_C
15
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 7F
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
30
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
Forward current transfer ratio
h_FE
V_CB = 6V, I_E = –1mA
40
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CB = 6V, I_E = –1mA
0.5
Base to emitter voltage
V_BE
V_CB = 6V, I_E = –1mA
Common emitter reverse transfer capacitance C_re
V_CB = 6V, I_E = –1mA, f = 10.7MHz
Transition frequency
f_T
V_CB = 6V, I_E = –1mA, f = 200MHz 450
Noise figure
NF
V_CB = 6V, I_E = –1mA, f = 100MHz
Power gain
PG
V_CB = 6V, I_E = –1mA, f = 100MHz
*1 _{Ratio between 2 elements}
typ max Unit
V
V
260
0.99
720
mV
0.8
1
pF
650
MHz
3.3
dB
24
dB
1