XP1D874 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – N-channel junction FET

Composite Transistors
XP1D874
N-channel junction FET
For low-frequency impedance conversion
For infrared sensor
s ^Features
q Two elements incorporated into one package.
(Drain-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 ^1.25±0.1 0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SK1842 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Gate to drain voltage V_GDO
–40
V
Rating _{Gate to source voltage}
of
V_GSO
–40
V
element ^{Gate current}
I_G
10
mA
Drain current
I_D
1
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Source (FET1)
2 : Drain
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: EQ
Internal Connection
FET 1
1
5
2
3
4
FET 2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Gate to drain voltage
Drain current
Gate cutoff current
Forward transfer admittance
Gate to source cutoff voltage
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
V_GDS
I_DSS
I_GSS
| Y_fS |
V_GSC
C_iss
C_rss
C_oss
I_G = –10µA, V_GS = 0
V_DS = 10V, V_GS = 0
V_GS = –20V, V_DS = 0
V_DS = 10V, V_GS = 0, f = 1kHz
V_DS = 10V, I_D = 1µA
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ max Unit
–40
V
30
200
µA
– 0.5 nA
0.05
mS
–1.3 –3.0
V
1.0
pF
0.4
pF
0.4
pF
1