XP1D873 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-channel junction FET

Composite Transistors
XP1D873
Silicon N-channel junction FET
For analog switching
s ^Features
q Two elements incorporated into one package.
(Drain-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
q Low-frequency and low-noise J-FET.
2.1±0.1
0.425 ^1.25±0.1 0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SK1103 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Rating ^{Gate to drain voltage}
V_GDS
–50
V
of
Drain current
I_D
30
mA
element _{Gate current}
I_G
10
mA
Total power dissipation
P_T
150
mW
Overall Channel temperature
T_ch
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Source (FET1)
2 : Drain (FET1, 2)
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: OC
Internal Connection
FET 1
1
5
2
3
4
FET 2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Drain voltage
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
Drain ON resistance
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
V_GDS
I_DSS
I_GSS
V_GSC
g_m
R_DS(on)
C_iss
C_rss
C_oss
I_G = –10µA, V_DS = 0
V_DS = 10V, V_GS = 0
V_GS = –30V, V_DS = 0
V_DS = 10V, I_D = 10µA
V_DS = 10V, I_D = 1mA, f = 1kHz
V_DS = 10mV, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ max Unit
–50
V
0.2
6.0
mA
–10
nA
–1.5 –3.5
V
1.8
2.5
mS
300
Ω
7
pF
1.5
pF
1.5
pF
1