XP1B301 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP(NPN) epitaxial planer transistor

Composite Transistors
XP1B301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
s ^Features
q Two elements incorporated into one package.
(Tr1 emitter is connected to Tr2 base.)
q Reduction of the mounting area and assembly cost by one half.
0.425
2.1±0.1
1.25±0.1
0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SB709A+2SD601A
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
–60
V
Collector to emitter voltage V_CEO
–50
V
Tr1
Emitter to base voltage
V_EBO
–7
V
Collector current
I_C
–100
mA
Peak collector current
I_CP
–200
mA
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Tr2
Emitter to base voltage
V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Base (Tr1)
2 : Base (Tr2)
Emitter (Tr1)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 4Q
Internal Connection
Tr1
1
5
2
3
4
Tr2
1