XP1554 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP1554
Silicon NPN epitaxial planer transistor
For high speed switching
s ^Features
q Two elements incorporated into one package.
(Emitter-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
q Low V_CE(sat).
s ^{Basic Part Number of Element}
q 2SC3757 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
40
V
Rating ^{Collector to emitter voltage}
V_CES
40
V
of
Emitter to base voltage
V_EBO
5
V
element _{Collector current}
I_C
100
mA
Peak collector current
I_CP
300
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
2.1±0.1
0.425 ^1.25±0.1 0.425
1
5
2
3
4
Unit: mm
0.2±0.1
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: EU
Internal Connection
Tr1
1
5
2
3
4
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_off
t_stg
V_CB = 15V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 1V, I_C = 10mA
60
I_C = 10mA, I_B = 1mA
I_C = 10mA, I_B = 1mA
V_CB = 10V, I_E = –10mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
typ max Unit
0.1
µA
0.1
µA
200
0.17 0.25
V
1.0
V
450
MHz
2
6
pF
17
ns
17
ns
10
ns
1