XP06543 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XP06543
Silicon NPN epitaxial planar type
For low noise amplification
■ Features
• High transition frequency f_T
• Two elements incorporated into one package (Each transistor is
separated)
■ Basic Part Number
• 2SC3904 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
10
V
Emitter-base voltage (Collector open) V_EBO
2
V
Collector current
I_C
65
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.2±0.05
6
5
4
1
23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12^{+–00..0025}
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: 9Y
Internal Connection
654
Tr1
Tr2
■ Electrical Characteristics T_a = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 1 V, I_C = 0
Forward current transfer ratio ^*
h_FE V_CE = 8 V, I_C = 20 mA
Transition frequency ^*
f_T
V_CE = 8 V, I_C = 20 mA, f = 1.5 GHz
Noise figure
NF V_CE = 8 V, I_C = 7 mA, f = 1.5 GHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
1
µA
1
µA
50 120 300

7.0 8.5
GHz
2.2 3.0
dB
0.6 1.0
pF
Forward transfer gain ^*
S_21e² V_CE = 8 V, I_C = 20 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain ^*
G_UM V_CE = 8 V, I_C = 20 mA, f = 1.5 GHz
10
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Pulse measurement
Publication date: June 2003
SJJ00217BED
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