XP05531 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP05531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob and reverse transfer ca-
pacitance C_rb.
q Two elements incorporated into one package.
2.1±0.1
0.425 1.25±0.1 0.425
1
6
2
5
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SC3130 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
15
V
Rating _{Collector to emitter voltage VCEO}
10
V
of
element ^{Emitter to base voltage}
V_EBO
3
V
Collector current
I_C
50
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 5M
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
V_CEO
V_EBO
I_CBO
I_CEO
h_FE1
h_FE2/h_FE1 ratio
h_FE2/h_FE1
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Common base reverse transfer capacitance
Collector to base parameter
V_CE(sat)
f_T
C_ob
C_rb
r_bb.C_C
I_C = 2mA, I_B = 0
10
I_E = 10µA, I_C = 0
3
V_CB = 10V, I_E = 0
V_CE = 10V, I_B = 0
V_CE = 4V, I_C = 5mA
75
V_CE = 4V, I_C = 100µA
V_CE = 4V, I_C = 5mA
I_C = 20mA, I_B = 4mA
V_CB = 4V, I_E = –5mA, f = 200MHz
1.4
V_CB = 4V, I_E = 0, f = 1MHz
V_CB = 4V, I_E = 0, f = 1MHz
V_CB = 4V, I_E = –5mA, f = 31.9MHz
typ max Unit
V
V
1
µA
10
µA
400
0.75
1.6
0.5
V
1.9
2.5 GHz
0.9
1.1
pF
0.25 0.35
pF
11.8 13.5
ps
1