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XP04401 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor | |||
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Composite Transistors
XP04401 (XP4401)
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q 2SB0709A(2SB709A) Ã 2 elements
0.2±0.05
6
5
4
1
23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10°
Unit: mm
0.12+â00..0025
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage VCBO
â60
V
Rating Collector to emitter voltage
VCEO
â50
V
of
Emitter to base voltage
VEBO
â7
V
element Collector current
IC
â100
mA
Peak collector current
ICP
â200
mA
Total power dissipation
PT
150
mW
Overall Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Base (Tr2)
6 : Collector (Tr1)
EIAJ : SCâ88
SMini6-G1 Package
Marking Symbol: 5K
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = â10µA, IE = 0
â60
IC = â2mA, IB = 0
â50
IE = â10µA, IC = 0
â7
VCB = â20V, IE = 0
VCE = â10V, IB = 0
VCE = â10V, IC = â2mA
160
IC = â100mA, IB = â10mA
VCB = â10V, IE = 1mA, f = 200MHz
VCB = â10V, IE = 0, f = 1MHz
typ
â 0.3
80
2.7
max
â 0.1
â100
460
â 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) The Part number in the Parenthesis shows conventional part number.
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