XP03383 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
XP03383
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
s ^Features
q Two elements incorporated into one package.
(Transistors with built-in resistor, Tr1 collecter is connected to
Tr2 base.)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 ^1.25±0.1 0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q UN1213+UN111F
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
50
V
Tr1 Collector to emitter voltage V_CEO
50
V
Collector current
I_C
100
mA
Collector to base voltage V_CBO
–50
V
Tr2 Collector to emitter voltage V_CEO
–50
V
Collector current
I_C
–100
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Emitter(Tr1)
2 : Base(Tr1)
3 : Emitter(Tr2)
4 : Collector(Tr2)
5 : Collector(Tr1)
Base(Tr2)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: DV
Internal Connection
Tr1
1
5
2
3
4
Tr2
1