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XP01554 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
Composite Transistors
XP01554 (XP1554)
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage VCE(sat)
■ Basic Part Number
• 2SC3757 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
40
V
Collector-emitter voltage (E-B short) VCEO
40
V
Emitter-base voltage (Collector open) VCBO
5
V
Collector current
IC
100
mA
Peak collector current
ICP
300
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.20±0.05
5
4
Unit: mm
0.12+–00..0025
1
2
3
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: EU
Internal Connection
5
4
Tr1
Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
Forward current transfer ratio
hFE VCE = 1 V, IC = 10 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1.0
450
2
6
µA
µA

V
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the switching time measurement
17
ns
toff circuit
17
ns
tstg
10
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00150BED
1