XP01531 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XP01531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
s ^Features
q Two elements incorporated into one package.
(Emitter-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.425
2.1±0.1
1.25±0.1
0.425
1
5
2
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SC3130 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Rating _{Collector to emitter voltage VCEO}
10
V
of
element ^{Emitter to base voltage}
V_EBO
3
V
Collector current
I_C
50
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 9F
Internal Connection
Tr1
1
5
2
3
4
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Collector to base parameter
Common base reverse transfer capacitance
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
r_bb'·C_C
C_rb
I_C = 2mA, I_B = 0
10
I_E = 10µA, I_C = 0
3
V_CB = 10V, I_E = 0
V_CE = 10V, I_B = 0
V_CE = 4V, I_C = 5mA
75
I_C = 20mA, I_B = 4mA
V_CB = 4V, I_E = –5mA, f = 200MHz
1.4
V_CB = 4V, I_E = 0, f = 1MHz
V_CB = 4V, I_E = –5mA, f = 31.9MHz
V_CB = 4V, I_E = 0, f = 1MHz
typ max Unit
V
V
1
µA
10
µA
200 400
0.5
V
1.9
2.5 GHz
0.9
1.1
pF
11.8 13.5
ps
0.25 0.35
pF
1