XN6A554 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN6A554
Silicon NPN epitaxial planer transistor
For high speed switching
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
q Low V_CE(sat).
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SC3757 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
40
V
Rating ^{Collector to emitter voltage V}CEO
40
V
of
Emitter to base voltage
V_EBO
5
V
element
Collector current
I_C
100
mA
Peak collector current
I_CP
300
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DT
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
I_CBO
V_CB = 40V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 4V, I_C = 0
Forward current transfer ratio
h_FE
V_CE = 1V, I_C = 10mA
60
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = 1V, I_C = 10mA
0.5
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
Base to emitter saturation voltage V_BE(sat)
I_C = 10mA, I_B = 1mA
Transition frequency
f_T
V_CE = 10V, I_E = –10mA, f = 200MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
Turn-off time
Turn-on time
t_on
t_off
*2
Storage time
t_stg
*1 _{Ratio between 2 elements}
*2 _{Test Circuits}
typ max Unit
0.1
µA
0.1
µA
320
0.99
0.17 0.25
V
1.0
V
450
MHz
2
6
pF
17
17
ns
10
1