XN6543 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
For low-noise amplification (2GHz band)
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SC3904 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
15
V
Rating _{Collector to emitter voltage}
of
V_CEO
10
V
element ^{Emitter to base voltage}
V_EBO
2
V
Collector current
I_C
65
mA
Total power dissipation
P_T
200
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 9Y
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ max Unit
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
1
µA
Emitter cutoff current
I_EBO
V_EB = 1V, I_C = 0
1
µA
Forward current transfer ratio
h_FE
V_CE = 8V, I_C = 20mA
50
120 300
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = 8V, I_C = 20mA
0.5
0.99
Transition frequency
f_T
V_CE = 8V, I_C = 20mA
7.0
8.5
GHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
0.6
1.0
pF
Forward transfer gain
| S_21e |²
V_CE = 8V, I_C = 20mA, f = 1.5GHz
7
9
dB
Power gain
GUM
V_CE = 8V, I_C = 20mA, f = 1.5GHz
10
dB
Noise figure
NF
V_CE = 8V, I_C = 7mA, f = 1.5GHz
2.2
3.0
dB
*1 _{Ratio between 2 elements}
1