XN6537 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN6537
Silicon NPN epitaxial planer transistor
For wide-band low-noise amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SC3110 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
15
V
Rating ^{Collector to emitter voltage}
V_CEO
12
V
of
Emitter to base voltage
V_EBO
2.5
V
element _{Collector current}
I_C
30
mA
Peak collector current
I_CP
50
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7H
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 2V, I_C = 0
Forward current transfer ratio
h_FE
V_CE = 10V, I_C = 10mA
40
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = 10V, I_C = 10mA
0.5
Transition frequency
f_T
V_CE = 10V, I_C = 10mA, f = 200MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
Forward transfer gain
| S_21e |²
V_CE = 10V, I_C = 20mA, f = 0.8GHz
Power gain
GUM
V_CE = 10V, I_C = 20mA, f = 0.8GHz
Noise figure
NF
V_CE = 10V, I_C = 5mA, f = 0.8GHz
*1 _{Ratio between 2 elements}
typ max Unit
100
nA
1
µA
0.99
4.5
GHz
1.2
pF
12
dB
14
dB
1.3
dB
1