XN6435 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
XN6435
Silicon PNP epitaxial planer transistor
For high-frequency amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SA1022 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Rating _{Collector to emitter voltage}
of
V_CEO
–20
V
element ^{Emitter to base voltage}
V_EBO
–5
V
Collector current
I_C
–30
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7W
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
I_CBO
V_CB = –10V, I_E = 0
I_CEO
V_CE = –20V, I_B = 0
Emitter cutoff current
I_EBO
V_EB = –5V, IC = 0
Forward current transfer ratio
h_FE
V_CE = –10V, I_C = –1mA
50
Forward current transfer h_FE ratio h_FE (small/large)^*1 V_CE = –10V, I_C = –1mA
0.5
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = –1mA
Base to emitter voltage
V_BE
V_CE = –10V, I_C = –1mA
Transition frequency
f_T
V_CB = –10V, I_E = 1mA, f = 200MHz 150
Noise figure
NF
V_CB = –10V, I_E = 1mA, f = 5MHz
Reverse transfer impedance
Z_rb
V_CB = –10V, I_E = 1mA, f = 2MHz
Common emitter reverse transfer capacitance C_re
V_CB = –10V, I_E = 1mA, f = 10.7MHz
*1 _{Ratio between 2 elements}
typ
0.99
– 0.1
– 0.7
2.8
22
1.2
max
–0.1
–100
–10
220
Unit
µA
µA
µA
V
V
MHz
dB
Ω
pF
1