XN4506 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – NPN epitaxial planer transistor

Composite Transistors
XN4506
NPN epitaxial planer transistor
For amplification of low frequency output
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SD1915(F) × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
50
V
Rating ^{Collector to emitter voltage V}CEO
20
V
of
Emitter to base voltage
V_EBO
25
V
element
Collector current
I_C
300
mA
Peak collector current
I_CP
500
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: EN
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
20
Collector cutoff current
I_CBO
V_CB = 50V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 25V, I_C = 0
Forward current transfer ratio
h_FE
V_CE = 2V, I_C = 4mA
500
Collector to emitter saturation voltage V_CE(sat)
I_C = 30mA, I_B = 3mA
Base to emitter voltage
V_BE
V_CE = 2V, I_C = 4mA
Transition frequency
f_T
V_CB = 6V, I_E = –4mA, f = 200MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
ON Resistance
R_on*1
*1 _{Ron test circuit}
1kΩ
IB=1mA
VB
VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000(Ω)
typ max Unit
V
0.1
µA
0.1
µA
2500
0.1
V
0.6
V
80
MHz
7
pF
1.0
Ω
1