XN4505 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – NPN epitaxial planer transistor

Composite Transistors
XN4505
NPN epitaxial planer transistor
For general amplification (Tr1)
For amplification of low frequency output (Tr2)
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SD601A+2SD1328
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Tr1
Emitter to base voltage
V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Collector to base voltage V_CBO
25
V
Collector to emitter voltage V_CEO
20
V
Tr2
Emitter to base voltage
V_EBO
12
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DZ
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
1