XN4504 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN4504
Silicon NPN epitaxial planer transistor
For amplification of low frequency output
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SD1328 × 2 elements
0.1 to 0.3
0.4±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
25
V
Rating ^{Collector to emitter voltage}
V_CEO
20
V
of
Emitter to base voltage
V_EBO
12
V
element _{Collector current}
I_C
0.5
A
Peak collector current
I_CP
1
A
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5X
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
25
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
20
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
12
Collector cutoff current
I_CBO
V_CB = 25V, I_E = 0
h_FE1
V_CE = 2V, I_C = 500mA^*1
200
Forward current transfer ratio
h_FE2
V_CE = 2V, I_C = 1A^*1
60
Collector to emitter saturation voltage V_CE(sat)
I_C = 500mA, I_B = 20mA
Base to emitter saturation voltage V_BE(sat)
Transition frequency
f_T
I_C = 500mA, I_B = 50mA
V_CB = 10V, I_E = –50mA, f = 200MHz
Collector output capacitance
ON Resistance
*1 _{Pulse measurement}
*2 _{Ron test circuit}
C_ob
R_on*2
IB=1mA
V_CB = 10V, I_E = 0, f = 1MHz
1kΩ
VB
VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000(Ω)
typ max Unit
V
V
V
0.1
µA
800
0.13
0.4
V
1.2
V
200
MHz
10
pF
1.0
Ω
1