XN4404 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
XN4404
Silicon PNP epitaxial planer transistor
For general amplification
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s ^{Basic Part Number of Element}
q 2SB970 × 2 elements
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–15
V
Rating ^{Collector to emitter voltage}
V_CEO
–10
V
of
Emitter to base voltage
V_EBO
–7
V
element _{Collector current}
I_C
– 0.5
A
Peak collector current
I_CP
–1
A
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: CV
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ max Unit
Collector to base voltage
V_CBO
I_C = –10µA, I_E = 0
–15
V
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
V_CEO
V_EBO
I_CBO
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CB = –10V, I_E = 0
–10
V
–7
V
– 0.1 µA
Forward current transfer ratio
h_FE1
V_CE = –2V, I_C = –500mA*
100
350
h_FE2
V_CE = –2V, I_C = –1A*
60
Collector to emitter saturation voltage V_CE(sat)
I_C = –400mA, I_B = –8mA*
– 0.16 – 0.3
V
Base to emitter saturation voltage V_BE(sat)
I_C = –400mA, I_B = –8mA*
–0.8 –1.2
V
Transition frequency
f_T
V_CB = –10V, I_E = 50mA, f = 200MHz
130
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
22
pF
*Pulse measurement
1