XN121E Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN121E
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s ^Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s ^{Basic Part Number of Element}
q UN121E × 2 elements
0.1 to 0.3
0.4±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Rating ^{Collector to base voltage}
V_CBO
50
V
of
Collector to emitter voltage V_CEO
50
V
element _{Collector current}
I_C
100
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: AQ
Internal Connection
Tr1
5
1
4
3
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h_FE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
*1 _{Ratio between 2 elements}
Symbol
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
h_FE (small/large)^*1
V_CE(sat)
V_OH
V_OL
R₁
R₁/R₂
f_T
Conditions
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
V_CE = 10V, I_C = 5mA
V_CE = 10V, I_C = 5mA
I_C = 10mA, I_B = 0.3mA
V_CC = 5V, V_B = 0.5V, R_L = 1kΩ
V_CC = 5V, V_B = 6V, R_L = 1kΩ
V_CB = 10V, I_E = –2mA, f = 200MHz
min
50
50
60
0.5
4.9
–30%
2
Tr2
typ max Unit
V
V
0.1
µA
0.5
µA
0.2
mA
0.99
0.25
V
V
0.2
V
47 +30% kΩ
2.14
150
MHz
1