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XN1118 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor | |||
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Composite Transistors
XN1118
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN1118 Ã 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Rating Collector to base voltage
VCBO
â50
V
of
Collector to emitter voltage VCEO
â50
V
element Collector current
IC
â100
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SCâ74A
Mini Type Pakage (5âpin)
Marking Symbol: OM
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25ËC)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1 Ratio between 2 elements
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
fT
R1
R1/R2
Conditions
IC = â10µA, IE = 0
IC = â2mA, IB = 0
VCB = â50V, IE = 0
VCE = â50V, IB = 0
VEB = â6V, IC = 0
VCE = â10V, IC = â5mA
VCE = â10V, IC = â5mA
IC = â10mA, IB = â 0.3mA
VCC = â5V, VB = â 0.5V, RL = 1kâ¦
VCC = â5V, VB = â2.5V, RL = 1kâ¦
VCB = â10V, IE = 1mA, f = 200MHz
min
â50
â50
20
0.5
â4.9
â30%
0.08
2
Tr2
typ max Unit
V
V
â 0.1 µA
â 0.5 µA
â 2.0 mA
0.99
â 0.25 V
V
â 0.2
V
80
MHz
0.51 +30% kâ¦
0.1
0.12
1
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