XN0F261 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XN0F261
Silicon NPN epitaxial planar type
For muting
■ Features
• Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
600
mA
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
Mini6-G1 Package
Marking Symbol: 6B
Internal Connection
456
Tr2
Tr1
■ Electrical Characteristics T_a = 25°C ± 3°C
32 1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 1 µA, I_E = 0
30
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
V
Emitter-base voltage (Collector open) V_EBO I_E = 1 µA, I_C = 0
5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 30 V, I_E = 0
1
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 5 V, I_C = 0
1
µA
Forward current transfer ratio
h_FE V_CE = 5 V, I_C = 50 mA
100
600

Collector-emitter saturation voltage
V_CE(sat) I_C = 50 mA, I_B = 2.5 mA
80 mV
Input resistance
R₁
−30% 3.3 +30% kΩ
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJJ00228AED
1