XN0C301 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor (Tr1)

Composite Transistors
XN0C301 (XN1C301)
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
s ^Features
q Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
q Reduction of the mounting area and assembly cost by one half.
s ^{Basic Part Number of Element}
q 2SB709A (2SB0709A) + 2SD601A (2SD0601A)
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
–60
V
Collector to emitter voltage V_CEO
–50
V
Tr1
Emitter to base voltage
V_EBO
–7
V
Collector current
I_C
–100
mA
Peak collector current
I_CP
–200
mA
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Tr2
Emitter to base voltage
V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Base (Tr1)
Emitter (Tr2)
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini5-G1 Package
Marking Symbol: 4R
Internal Connection
Tr1
5
1
4
3
2
Tr2
Note) The Part number in the Parenthesis shows conventional part number.
1