XN0B301 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – For general amplification

Composite Transistors
XN0B301 (XN1B301)
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SB0709A (2SB709A) + 2SD0601A (2SD601A)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
V_CBO
−60
V
(Emitter open)
Collector-emitter voltage V_CEO
−50
V
(Base open)
Emitter-base voltage
V_EBO
−7
V
(Collector open)
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Tr2
Collector-base voltage
V_CBO
60
V
(Emitter open)
Collector-emitter voltage V_CEO
50
V
(Base open)
Emitter-base voltage
V_EBO
7
V
(Collector open)
Overall
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
I_C
100
mA
I_CP
200
mA
P_T
300
mW
T_j
150
°C
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
0.95 0.95
3
4
5
2
1
0.30^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Collector (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74A
4: Base (Tr2)
Emitter (Tr1)
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 4Q
Internal Connection
345
Tr2
Tr1
2
1
Publication date: December 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00117CED
1