XN09D61 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type (Tr) / Silicon epitaxial planar type (SBD)

Composite Transistors
XN09D61
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
0.50^{+–00..0150}
0.30^{+–00..0150}
Unit: mm
0.16^{+–00..0160}
■ Features
• Two elements incorporated into one package (Tr + SBD)
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage V_CE(sat)
■ Basic Part Number
• 2SA2046 + MA3ZD12
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Tr
Collector-base voltage
V_CBO
−15
V
(Emitter open)
Collector-emitter voltage V_CEO
−15
V
(Base open)
Emitter-base voltage
V_EBO
−5
V
(Collector open)
Collector current
I_C
−1.5
A
Peak collector current
I_CP
−3
A
SBD Reverse voltage
V_R
20
V
Repetitive peak reverse voltage V_RRM
25
V
Forward current (Average) I_F(AV)
700
mA
Non-repetitive peak
I_FSM
2
A
forward surge current
Overall
Total power dissipation ^*
Junction temperature
Storage temperature
P_T
600
mW
T_j
125
°C
T_stg −55 to +125 °C
Note) _*: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
65
4
1
2
3
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
Display at No.1 lead
10°
1: Emitter
2: Base
3: Anode
4: Collector (Cathode)
5: Collector (Cathode)
6: Collector (Cathode)
Mini6-G1 Package
Marking Symbol: RA
Internal Connection
654
123
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage ^*
V_CBO
V_CEO
V_EBO
I_CBO
h_FE
V_CE(sat)
I_C = −10 µA, I_E = 0
I_C = −1 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −10 V, I_E = 0
V_CE = −2 V, I_C = −100 mA
I_C = −750 mA, I_B = −15 mA
I_C = −1.5 A, I_B = −50 mA
−15
V
−15
V
−5
V
− 0.1 µA
160
560

−90 −200 mV
−130
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: June 2003
SJJ00247BED
1