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XN06543 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
Composite Transistors
XN06543 (XN6543)
Silicon NPN epitaxial planar type
For low-noise amplification (2 GHz band)
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SC3904 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
15
V
Collector-emitter voltage (Base open) VCEO
10
V
Emitter-base voltage (Collector open) VEBO
2
V
Collector current
IC
65
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30+–00..0150
0.50+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 9Y
Internal Connection
456
Tr2
Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
321
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
1
µA
Forward current transfer ratio
hFE ratio *
hFE VCE = 8 V, IC = 20 mA
hFE(Small VCE = 8 V, IC = 20 mA
50 120 300

0.50 0.99

/Large)
Transition frequency
fT
VCE = 8 V, IC = 20 mA, f = 200 MHz
7.0 8.5
GHz
Noise figure
Collector output capacitance
(Common base, input open circuited)
NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.2 3.0
dB
0.6 1.0
pF
Forward transfer gain
S21e2 VCE = 8 V, IC = 20 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
GUM VCE = 8 V, IC = 20 mA, f = 1.5 GHz
10
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00112BED
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