XN06534 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XN06534 (XN6534)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SC2404 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
15
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 7F
Internal Connection
456
Tr2
Tr1
321
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
h_FE ratio ^*
V_CBO
V_EBO
V_BE
h_FE
h_FE(Small
I_C = 10 µA, I_E = 0
I_E = 10 µA, I_C = 0
V_CB = 6 V, I_E = −1 mA
V_CB = 6 V, I_E = −1 mA
V_CB = 6 V, I_E = −1 mA
30
V
3
V
720
mV
40
260

0.50 0.99

Transition frequency
Reverse transfer capacitance
(Common emitter)
/Large)
f_T
V_CB = 6 V, I_E = −1 mA, f = 200 MHz
450 650
MHz
C_re V_CB = 6 V, I_E = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
G_P V_CB = 6 V, I_E = −1 mA, f = 100 MHz
24
dB
NF V_CB = 6 V, I_E = −1 mA, f = 100 MHz
3.3
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00109BED
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