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XN05531 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor
Composite Transistors
XN05531 (XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
I Features
G Two elements incorporated into one package.
G Reduction of the mounting area and assembly cost by one half.
I Basic Part Number of Element
G 2SC3130 × 2 elements
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30+–00..0150
0.50+–00..0150
10°
Unit: mm
0.16+–00..0160
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Rating Collector to emitter voltage VCEO
10
V
of
element Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Total power dissipation
PT
200
mW
Overall Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini6-G1 Package
Marking Symbol: 5M
Internal Connection
Tr1
6
1
5
2
4
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
10
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
Collector cutoff current
ICBO
VCB = 10V, IE = 0
ICEO
VCE = 10V, IB = 0
Forward current transfer ratio
hFE1
VCE = 4V, IC = 5mA
75
Forward current transfer hFE ratio hFE (small/large)*1 VCE = 4V, IC = 5mA
0.5
hFE2/hFE1 ratio
VCE = 4V, IC = 100µA
hFE2/hFE1
VCE = 4V, IC = 5mA
0.75
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 4mA
Collector output capacitance
Cob
VCB = 4V, IE = 0, f = 1MHz
Transition frequency
fT
VCB = 4V, IE = –5mA, f = 200MHz
1.4
Collector to base parameter
rbb'·CC
VCB = 4V, IE = –5mA, f = 30MHz
Common base reverse transfer capacitance Crb
VCB = 4V, IE = 0, f = 1MHz
*1 Ratio between 2 elements
3
Tr2
typ max Unit
V
V
1
µA
10
µA
200 400
0.99
1.6
0.5
V
0.9
1.1
pF
1.9
2.5 GHz
11.8 13.5
ps
0.25 0.35
pF
Note) The Part number in the Parenthesis shows conventional part number.
1