XN04608 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
XN04608 (XN4608)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For general amplification (Tr1)
For amplification of low frequency output (Tr2)
I ^Features
G Two elements incorporated into one package.
G Reduction of the mounting area and assembly cost by one half.
I ^{Basic Part Number of Element}
G 2SD0601A(2SD601A) + 2SB0970(2SB970)
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10°
Unit: mm
0.16^{+–00..0160}
I ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Tr1
Emitter to base voltage
V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Collector to base voltage V_CBO
–15
V
Collector to emitter voltage V_CEO
–10
V
Tr2
Emitter to base voltage
V_EBO
–7
V
Collector current
I_C
– 0.5
A
Peak collector current
I_CP
–1
A
Total power dissipation
P_T
300
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini6-G1 Package
Marking Symbol: 5E
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
Note) The Part number in the Parenthesis shows conventional part number.
1