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XN04602 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
Composite Transistors
XN04602
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0602A + 2SB0710A
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
60
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Emitter-base voltage
VEBO
5
V
(Collector open)
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Tr2
Collector-base voltage
VCBO
−60
V
(Emitter open)
Collector-emitter voltage VCEO
−50
V
(Base open)
Emitter-base voltage
VEBO
−5
V
(Collector open)
Overall
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
IC
− 0.5
A
ICP
−1
A
PT
300
mW
Tj
150
°C
Tstg −55 to +150 °C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30+–00..0150
0.50+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
Marking Symbol: 4A
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Internal Connection
456
Tr2
Tr1
321
Publication date: December 2003
SJJ00261BED
1