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XN04601 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor For general amplification | |||
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Composite Transistors
XN04601 (XN4601)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For general amplification
I Features
G Two elements incorporated into one package.
G Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
â0.3
1.5
+0.25
â0.05
Unit: mm
0.65±0.15
1
2
3
I Basic Part Number of Element
G 2SD0601A(2SD601A) + 2SB0709A(2SB709A)
I Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage VCBO
60
V
Collector to emitter voltage VCEO
50
V
Tr1
Emitter to base voltage
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector to base voltage VCBO
â60
V
Collector to emitter voltage VCEO
â50
V
Tr2
Emitter to base voltage
VEBO
â7
V
Collector current
IC
â100
mA
Peak collector current
ICP
â200
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SCâ74
Mini Type Package (6âpin)
Marking Symbol: 5C
Internal Connection
Tr1
6
1
5
2
4
3
Tr2
Note.) The Part number in the Parenthesis shows conventional part number.
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