XN04504 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XN04504 (XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD1328 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
25
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
12
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5X
Internal Connection
456
Tr2
Tr1
■ Electrical Characteristics T_a = 25°C ± 3°C
321
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
25
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
12
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 25 V, I_E = 0
100 nA
Forward current transfer ratio ^*1
h_FE1 V_CE = 2 V, I_C = 0.5 A
200
800

Collector-emitter saturation voltage ^*1
h_FE2
V_CE(sat)
V_CE = 2 V, I_C = 1 A
I_C = 0.5 A, I_B = 20 mA
60
0.13 0.40
V
Base-emitter saturation voltage ^*1
V_BE(sat) I_C = 0.5 A, I_B = 50 mA
1.2
V
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
10
pF
ON resistance ^*2
R_on
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
1 kΩ
*2: ^Ron ^{test circuit}
I_B = 1 mA
f = 1 kHz
V = 0.3 V
V_B V_V V_A
Publication date: February 2004
R_on =
V_B ×
V_A
1 000
− V_B
(Ω)
Note) The part number in the parenthesis shows conventional part number.
SJJ00078BED
1