XN04502 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XN04502 (XN4502)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0602A (2SD602A) × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
60
V
Collector-emitter voltage (Base open) V_CEO
50
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Total power dissipation
Junction temperature
Storage temperature
P_T
300
mW
T_j
150
°C
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5Q
Internal Connection
456
Tr2
Tr1
321
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
60
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
5
Collector-base cutoff current (Emitter open) I_CBO V_CB = 20 V, I_E = 0
Forward current transfer ratio
h_FE1 V_CE = 10 V, I_C = 150 mA
85
h_FE2 ^* V_CE = 10 V, I_C = 500 mA
40
Collector-emitter saturation voltage
V_CE(sat) I_C = 300 mA, I_B = 30 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
Typ Max
0.1
340
0.35 0.60
200
6
15
Unit
V
V
V
µA

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Pulse measurement
Publication date: August 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00076BED
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