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XN04501 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
Composite Transistors
XN04501 (XN4501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Total power dissipation
Junction temperature
Storage temperature
PT
300
mW
Tj
150
°C
Tstg −55 to +150 °C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30+–00..0150
0.50+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5H
Internal Connection
456
Tr2
Tr1
321
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
160
460

Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00075BED
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