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XN01872 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon n-channel enhancement MOSFET
Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
For switching
■ Features
• Two elements incorporated into one package
(Source-coupled FETs)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SK0621 (2SK621) × 2
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain curennt
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
50
V
VGSO
8
V
ID
100
mA
IDP
200
mA
PT
300
mW
Tch
150
°C
Tstg −55 to +150 °C
1: Drain (FET1)
2: Drain (FET2)
3: Gate (FET2)
EIAJ: SC-74A
4: Source
5: Gate (FET1)
Mini5-G1 Package
Marking Symbol: 5U
Internal Connection
345
FET2
FET1
■ Electrical Characteristics Ta = 25°C ± 3°C
2
1
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
VDSS ID = 100 µA, VGS = 0
50
V
Drain-source cutoff current
IDSS VDS = 10 V, VGS = 0
10
µA
Gate-source cutoff current
IGSS VGS = 8 V, VDS = 0
40
80
µA
Gate threshold voltage
Vth
ID = 100 µA, VDS = VGS
1.5
3.5
V
Drain-source ON resistance
RDS(on) ID = 20 mA, VGS = 5 V
50
Ω
Forward transfer admittance
Yfs ID = 20 mA, VDS = 5 V, f = 1 kHz
20 30
mS
Output voltage high-level
VOH VDS = 5 V, VGS = 1 V, RL = 200 Ω
4.5
V
Output voltage low-level
VOL VDS = 5 V, VGS = 5 V, RL = 200 Ω
1.0
V
Input resistance *1
R1+R2
100
200 kΩ
Turn-on time *2
ton
VDD = 5 V, VGS = 0 V to 5 V, RL = 200 Ω
1.0
µs
Turn-off time *2
toff
VDD = 5 V, VGS = 5 V to 0 V, RL = 200 Ω
1.0
µs
Short-circuit forward transfer capacitance Ciss
(Common-source)
VDS = 5 V, VGS = 0, f = 1 MHz
9
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Resistance ratio R1 /R2 = 1/50
*2: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00035BED
1