XN01558 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type For low-frequency amplification

Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD2623 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
25
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
12
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 4Z
Internal Connection
345
Tr2
Tr1
■ Electrical Characteristics T_a = 25°C ± 3°C
2
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
25
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
12
Collector-base cutoff current (Emitter open) I_CBO V_CB = 25 V, I_E = 0
Forward current transfer ratio ^*1
h_FE V_CE = 2 V, I_C = 0.5 A
200
h_FE ratio ^{*1, 2}
h_FE(Small V_CE = 2 V, I_C = 0.5 A
0.50
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse ^*3
/Large)
V_CE(sat)
V_BE(sat)
f_T
C_ob
R_on
I_C = 0.5 A, I_B = 20 mA
I_C = 0.5 A, I_B = 50 mA
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Ratio between one and another device}
*3: ^Ron ^{test circuit}
I_B = 1 mA
1
Typ Max Unit
V
V
V
100 nA
800

0.99

0.14 0.40
1.2
200
10
V
V
MHz
pF
1.0
Ω
1 kΩ
V_B V_V V_A
f = 1 kHz
V = 0.3 V
Publication date: December 2003
SJJ00264BED
R_on =
V_B ×
V_A
1 000
− V_B
(Ω)
1