XN01504 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Composite Transistors
XN01504 (XN1504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD1915F × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
25
V
Collector current
I_C
300
mA
Peak collector current
I_CP
500
mA
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 5S
Internal Connection
345
Tr2
Tr1
2
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
Base-emitter voltage
V_BE V_CE = 2 V, I_C = 4 mA
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 25 V, I_C = 0
Forward current transfer ratio
h_FE V_CE = 2 V, I_C = 4 mA
500
h_FE ratio ^*1
h_FE(Small V_CE = 2 V, I_C = 4 mA
0.50
/Large)
Collector-emitter saturation voltage
V_CE(sat) I_C = 30 mA, I_B = 3 mA
Transition frequency
f_T
V_CB = 6 V, I_E = −4 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
ON resistanse ^*2
R_on
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
1 kΩ
STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
I_B = 5 mA
*2: Ron start resistance test circuit
V_B V_V V_A
1
Typ Max
0.6
0.1
0.1
2 500
0.99
0.1
80
7
1.0
f = 1 kHz
V = 0.3 V
Unit
V
V
µA
µA


V
MHz
pF
Ω
R_on =
V_B ×
V_A
1 000
− V_B
(Ω)
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00029BED
1