XN01112 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For switching/digital circuits

Composite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planar type
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2112 (UN2112) × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
300
mW
T_j
150
°C
T_stg −55 to +150 °C
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30^{+–00..0150}
10˚
Unit: mm
0.16^{+–00..0160}
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 7K
Internal Connection
345
Tr2
Tr1
■ Electrical Characteristics T_a = 25°C ± 3°C
2
1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h_FE Ratio ^*
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
h_FE(Small
/Large)
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −10 V, I_C = −5 mA
V_CE = −10 V, I_C = −5 mA
I_C = −10 mA, I_B = − 0.3 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
−50
−50
60
0.50
−4.9
−30%
0.8
− 0.1
− 0.5
− 0.2
0.99
− 0.25
− 0.2
22 +30%
1.0 1.2
80
V
V
µA
µA
mA


V
V
V
kΩ

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00005BED
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