UP04979 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2)

Composite Transistors
UP04979
Silicon N-channel MOSFET (Tr1)
Silicon P-channel MOSFET (Tr2)
For switching
■ Features
• High-speed switching
• Gate protection diode built-in
• Two elements incorporated into one package
(Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SJ0672 + 2SK3539
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Tr1
Drain-source surrender
V_DSS
50
V
voltage
Gate-source voltage
(Drain open)
V_GSO
±7
V
Drain current
I_D
100
mA
Peak drain current
I_DP
200
mA
Tr2
Drain-source surrender
V_DSS
−30
V
voltage
Gate-source voltage
(Drain open)
V_GSO
±7
V
Overall
Drain current
Peak drain current
Total power dissipation ^*
Junction temperature
Storage temperature
I_D
−100
mA
I_DP
−200
mA
P_T
125
mW
T_ch
125
°C
T_stg −55 to +125 °C
Note) _*: Measuring on substrate at 17 mm × 10 mm × 1 mm
(0.30)
654
0.20^{+–00..0025}
Unit: mm
0.10±0.02
5˚
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
JEDEC: SOD-723
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
SSMini6-F1 Package
Marking Symbol: 4T
Internal Connection
(D1) (G2) (S2)
654
123
(S1) (G1) (D2)
Publication date: August 2004
SJJ00303AED
1