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UP04601 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
Composite Transistors
UP04601
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
■ Features
• Two elements incorporated into one package
(Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A + 2SB0709A
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
60
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Emitter-base voltage
VEBO
7
V
(Collector open)
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Tr2
Collector-base voltage
VCBO
−60
V
(Emitter open)
Collector-emitter voltage VCEO
−50
V
(Base open)
Emitter-base voltage
VEBO
−7
V
(Collector open)
Overall
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
IC
−100
mA
ICP
−200
mA
PT
125
mW
Tj
125
°C
Tstg −55 to +125 °C
(0.30)
654
0.20+–00..0025
Unit: mm
0.10±0.02
5˚
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: 5C
Internal Connection
654
Tr1
Tr2
123
Publication date: December 2003
SJJ00233BED
1