UP04401 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Composite Transistors
UP04401
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SB0709A × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Total power dissipation
P_T
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
(0.30)
654
0.20^{+–00..0025}
Unit: mm
0.10±0.02
5˚
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: 5K
Internal Connection
654
Tr1
Tr2
123
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−60
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−50
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −2 mA
180
Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.3
80
2.7
− 0.1
−100
390
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
SJJ00231BED
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