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UP04390 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon (NPN,PNP) epitaxial planar type | |||
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Composite Transistors
UP04390
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20+â00..0025
Unit: mm
0.10±0.02
â Features
⢠Two elements incorporated into one package
(Transistors with built-in resistor)
⢠Reduction of the mounting area and assembly cost by one half
â Basic Part Number
⢠UNR1114 + UNR1213
â Absolute Maximum Ratings Ta = 25°C
5Ë
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5Ë
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
50
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Collector current
IC
100
mA
Tr2
Collector-base voltage
VCBO
â50
V
(Emitter open)
Collector-emitter voltage VCEO
â50
V
(Base open)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: 3V
Internal Connection
654
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC
â100
mA
PT
125
mW
Tj
125
°C
Tstg â55 to +125 °C
Tr1
Tr2
123
â Electrical Characteristics Ta = 25°C ± 3°C
⢠Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.1
µA
0.5
µA
0.1 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kâ¦
4.9

0.25
V
V
Output voltage low level
Input resistance
Resistance ratio
VOL
R1
R1/R2
VCC = 5 V, VB = 3.5 V, RL = 1 kâ¦
0.2
V
â30% 4.7 +30% kâ¦
0.8 1.0 1.2

Transition frequency
fT
VCB = 10 V, IE = â2 mA, f = 200MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
SJJ00288AED
1
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