UP0411M Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Composite Transistors
UP0411M
Silicon PNP epitaxial planar type
For digital circuits
(0.30)
654
0.20^{+–00..0025}
Unit: mm
0.10±0.02
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR211M × 2
5˚
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
125
mW
T_j
125
°C
T_stg −55 to +125 °C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: EA
Internal Connection
654
Tr1
Tr2
■ Electrical Characteristics T_a = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −10 V, I_C = −5 mA
I_C = −10 mA, I_B = − 0.3 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
−50
−50
80
−4.9
−30%
2.2
0.047
80
− 0.1
− 0.5
− 0.2
− 0.25
− 0.2
+30%
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
SJJ00242CED
1