UP01113 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Composite Transistors
UP01113
Silicon PNP epitaxial planar type
For digital circuits
(0.30)
5
4
0.20
+0.05
–0.02
Unit: mm
0.10±0.02
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR1113 × 2
123
(0.50) (0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
P_T
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
SSMini5-F2 Package
Marking Symbol: 7L
Internal Connection
(C1)
(C2)
5
4
Tr1
Tr2
R1
(47 kΩ)
R2 R2
(47 kΩ) (47 kΩ)
R1
(47 kΩ)
123
(B1) (E) (B2)
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−50
V
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −50 V, I_E = 0
− 0.1 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
− 0.5 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = −6 V, I_C = 0
− 0.1 mA
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −5 mA
80

Collector-emitter saturation voltage
V_CE(sat) I_C = −10 mA, I_B = − 0.3 mA
− 0.25 V
Output voltage high-level
V_OH V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ −4.9
V
Output voltage low-level
V_OL V_CC = −5 V, V_B = −3.5 V, R_L = 1 kΩ
− 0.2 V
Input resistance
R₁
−30% 47 +30% kΩ
Resistance ratio
R₁ / R₂
0.8 1.0 1.2

Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2004
SJJ00297AED
1